1/6 preliminary data november, 20 2002 DB-900-100W 100w / 26v / 869-894 mhz pa using 2x pd57060s the ldmost family order code DB-900-100W absolute maximum ratings (t case = 25 o c) symbol parameter value unit v dd supply voltage 32 v i d drain current 12 a p diss power dissipation at tcase = +85c 145 w t case operating case temperature -20 to +85 o c p amb max. ambient temperature +55 o c rf power amplifier demoboard using two n-channel enhancement-mode lateral mosfets ? excellent thermal stability ? common source configuration ? p out = 100 w min. with 13 db gain over 869-894 mhz ? 10:1 load vswr capability ? beo free amplifier typical cdma performance: is-95 cdma / 9ch fwd pout = 20w gain = 13 db nd = 22% acpr (750 khz) : -45 dbc acpr (1.98 mhz) : -60 dbc description the DB-900-100W is a common source n-chan- nel enhancement-mode lateral field-effect rf power amplifier designed for is-54/-136 & is-95 base station applications. the DB-900-100W is designed in cooperation with europeenne de telecomunications s.a. (www.etsa.rf), for high gain and broadband performance operating in common source mode at 26 v, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dbc. mech. specification l=80 mm w=50 mm h=10 mm
DB-900-100W 2/6 symbol test conditions min. typ. max. unit freq. frequency range 869 894 mhz gain p out = 100 w 12.5 13 db p 1db over frequency range: 869 - 894 mhz 100 w flatness over frequency range and @ p out = 100 w +/- 0.5 db flatness p out from 0.1w to 100 w 1db nd at p 1db p 1db 40 45 % irtl input return loss p out from 0.1w to 100 w -20 -15 db harmonic p out = 100 w -40 -30 dbc vswr load mismatch all phases @ p out = 100 w 10:1 spurious 10:1 vswr all phases and p out from 0.1 to 100w -76 dbc imd 3 p out = 100 wpep -25 dbc electrical specification (t amb = +25 o c, vdd = 26v, idq = 2 x 200 ma) typical cdma performance is 95 / 9ch fwd (vdd = 26v, idq = 350ma) frequency pout ch pw r pout ch pw r acpr -750 khz acpr +750 khz acpr -1.98 mhz acpr +1.98 mhz i total nd (mhz) (w) (dbm ) (dbc) (dbc) (dbc) (dbc) (a) (%) 865 10 40.0 53.4 50.8 67.0 67.0 880 10 40.0 54.2 51.7 68.6 68.3 895 10 40.0 53.2 51.7 69.0 69.0 865 20 43.0 45.0 45.0 64.0 64.0 880 20 43.0 45.1 45.4 64.7 64.7 895 20 43.0 45.2 45.7 66.8 66.5 2.5 3.5 15.4 22.0
3/6 DB-900-100W typical performance power gain vs output power power gain vs frequency efficiency vs frequency 1 10 100 1000 pout (w) 10 11 12 13 14 15 16 17 18 gp (db) vdd = 26 v idq = 2 x 200ma 865 mhz 880 mhz 895 mhz 860 865 870 875 880 885 890 895 900 f (mhz) 10 11 12 13 14 15 16 17 18 gp (db) vdd = 26 v idq = 2 x 200ma pout = 110w pout = 100w pout = 15w 860 865 870 875 880 885 890 895 900 f (mhz) 30 35 40 45 50 55 60 nd (%) vdd = 26 v idq = 2 x 200ma pout = 110w pout = 100w
DB-900-100W 4/6 test fixture component layout test circuit photomaster ref. etsa c07/2000 - ed1 cv1 cv2 ref. etsa c07/2000 - ed1
5/6 DB-900-100W test circuit component part list component description t1, t2 pd57060s transistor c1, c2, c23, c24 47pf - 500v ceramic chip capacitor c3, c4, c12, c14 6.8pf - 500v ceramic chip capacitor c5, c6, c17, c18 100pf - 500v ceramic chip capacitor c7, c8, c9, c10, c11, c13 10pf - 500v ceramic chip capacitor c15, c16 100nf - 63v ceramic chip capacitor c19, c20 1f / 35v electrolytic capacitor c26, c27 3.3pf - 500v ceramic chip capacitor c21, c22 4.7pf - 500v ceramic chip capacitor c25 0.5pf - 500v ceramic chip capacitor cv1, cv2 adjustable capacitor 0.6 - 4.5pf / 500v p1, p2 10k ohms multiturn potentiometer r1,r7 100 ohms 1/4w 1206 smd chip resistor r2 50 ohms 30w - 4ghz load r3, r4 4.7k ohms 1/4w 1206 smd chip resistor r5, r6 10k ohms 1/4w 1206 smd chip resistor d1, d2 zener diode 5v - 500 mw sod80 sm1, sm2 90 smd hybrid coupler anaren xinger 1304-3 board metclad mx3-30-c1/10c thk 0.762 mm cu 35 substrate teflon-glass er = 2.55 back side copper flange 2 mm thickness ceramic chip capacitors atc100b or equivalent
DB-900-100W 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. htt p ://www.st.com
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